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| PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt ZTX558 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg -400 -400 -5 -200 1 E-Line TO92 Compatible VALUE UNIT V V V mA W C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times SYMBOL MIN. V(BR)CBO VBR(CEO) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 95 1600 3-202 100 100 15 50 5 -400 -400 -5 -100 -100 -100 -0.2 -0.5 -0.9 -0.9 300 MHz pF ns ns TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-2mA IC=-50mA, IB=-6mA IC=-50mA, IB=-5mA IC=-50mA, VCE=-10V IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZTX558 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.6 -55C +25C +100C +175C IC/IB=10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC hFE - Normalised Gain 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 1.6 300 1.4 -55C +25C +100C +175C IC/IB=10 hFE - Typical Gain VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1.0 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C VCE=10V 1.6 1.4 IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-203 |
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